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NVTFS4823N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = 250 m A
30
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 30 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 10 V, I D = 15 A
1.5
8.1
2.5
10.5
V
m W
V GS = 4.5 V, I D = 15 A
13.5
17.5
Forward Transconductance
g FS
V DS = 1.5 V, I D = 20 A
34
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
750
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 12 V
175
100
Total Gate Charge
Q G(TOT)
6.0
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 15 A
0.8
2.4
2.4
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 15 A
12
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
12
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
22
14
4
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 15 A
T J = 25 ° C
T J = 125 ° C
0.85
0.72
1.1
V
Reverse Recovery Time
t RR
12
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V,
dI S /dt = 100 A/ m s,
I S = 15 A
6.0
6.0
Reverse Recovery Charge
Q RR
5.0
nC
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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